access icon free Analytical modelling of work-function modulated delta-doped TFET to improve analogue performance

© The Institution of Engineering and Technology
Received 03/04/2017, Accepted 26/01/2018, Published 29/01/2018

In this study, an analytical model for linearly modulated work-function-based delta-doped single-gate tunnel field-effect transistor (TFET) has been developed to improve the analogue performance. The impact of delta-doped layer and linearly modulated metal gate on different analogue parameters has been investigated extensively. The insertion of heavily doped delta layer in the source region improves ON current and current switching ratio performance significantly as compared to conventional TFET. Similarly, the presence of spatially work-function modulated metal gate reduces subthreshold swing and improves performance. The distance of the delta layer from the source–channel interface is optimised to 3 nm to maximise efficiency. The proposed model exhibits much improved analogue performance as compared to conventional TFET and delta-doped TFET. Thus, the model can be viewed as one of the potential replacements for metal–oxide–semiconductor field-effect transistors in ultra-low-power applications. However, the precision of present model is corroborated by using the two-dimensional TCAD Sentaurus simulator.

Inspec keywords: low-power electronics; tunnel transistors; work function; MOSFET; semiconductor device models

Other keywords: linearly modulated metal gate; linearly modulated work-function-based delta-doped single-gate tunnel field-effect transistor; work-function modulated delta-doped TFET; two-dimensional TCAD Sentaurus simulator; delta-doped layer; source region; source-channel interface; analogue performance; analytical modelling; current switching ratio performance; ultra-low-power applications; metal-oxide-semiconductor field-effect transistors

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Insulated gate field effect transistors

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