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access icon openaccess Graphene oxide thin films for resistive memory switches

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      • 3. Hoefler, A., Higman, J.M., Harp, T., et al: ‘Statistical modeling of the program/erase cycling acceleration of low temperature data retention in floating gate nonvolatile memories’. 40th Annual IEEE Int. Reliability Physics Symp., Dallas, Texas, 7–11 April 2002, pp. 2125.
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      • 21. He, C.L., Zhuge, F., Zhou, X.F., et al: ‘Nonvolatile resistive switching in graphene oxide thin films’, Appl. Phys. Lett., 2009, 95, (23), Article Number: 232101, pp. 13, doi: 10.1063/1.3271177.
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