Radio-frequency transport Electromagnetic Properties of chemical vapour deposition graphene from direct current to 110 MHz

Shakil A. Awan; Genhua Pan; Laith M. Al Taan; Bing Li; Nawfal Jamil

Radio-frequency transport Electromagnetic Properties of chemical vapour deposition graphene from direct current to 110 MHz

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Author(s): Shakil A. Awan ^{1, 2} ; Genhua Pan ¹ ; Laith M. Al Taan ¹ ; Bing Li ¹ ; Nawfal Jamil ¹
- Affiliations: 1: School of Computing and Mathematics, Faculty of Science and Environment, Plymouth University, Drake Circus, Plymouth, PL4 8AA, UK;
  2: Cambridge Graphene Centre, Department of Engineering, University of Cambridge, Madingley Road, Cambridge, CB3 0FA, UK
Source: Volume 9, Issue 1, January 2015, p. 46 – 51
DOI: 10.1049/iet-cds.2014.0204 , Print ISSN 1751-858X, Online ISSN 1751-8598

Received 03/07/2014, Accepted 13/09/2014, Revised 02/10/2014, Published 02/02/2015

The authors report measurement of the radio-frequency (RF) transport electromagnetic properties of chemical vapour deposition graphene over the direct current (DC) to 110 MHz frequency range at room temperature. Graphene on Si/SiO₂ substrate was mounted in a shielded four terminal-pair (4TP) adaptor which enabled direct connection to a calibrated precision impedance analyser for measurements. Good agreement is observed for the DC four-probe resistance and the 4TP resistance at 40 Hz, both yielding R ≈ 104 Ω. In general, the apparent graphene channel electromagnetic properties are found to be strongly influenced by the substrate parasitic capacitance and resistance, particularly for high-frequencies f > 1 MHz. A phenomenological lumped-parameter equivalent circuit model is presented which matches the frequency response of the graphene 4TP impedance device over approximately seven decades of the frequency range of the applied transport alternating current. Based on this model, it is shown for the first time, that the intrinsic graphene channel resistance of the 4TP device is ‘frequency-independent’ with R _G ≃ 105 Ω or sheet resistance of approximately 182 Ω/□. The parasitic substrate impedance of the device is found to be R _P ≃ 2.2 Ω and C _P ≃ 600 pF. These results suggest that our new RF 4TP method is in good agreement with the conventional DC four-probe method for measuring the intrinsic sheet resistance of single-atom thick materials and could potentially open up new applications in RF electronics, AC quantum Hall effect metrology and sensors based on graphene 4TP devices operating over a broad range of frequencies.

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Radio-frequency transport Electromagnetic Properties of chemical vapour deposition graphene from direct current to 110 MHz

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