%0 Electronic Article %A Guohuan Hua %+ National ASIC System Engineering Research Center, Southeast University, Nanjing, Jiangsu 210 096, People's Republic of China %A Weifeng Sun %+ National ASIC System Engineering Research Center, Southeast University, Nanjing, Jiangsu 210 096, People's Republic of China %A Xiaoying He %+ National ASIC System Engineering Research Center, Southeast University, Nanjing, Jiangsu 210 096, People's Republic of China %A Shen Xu %+ National ASIC System Engineering Research Center, Southeast University, Nanjing, Jiangsu 210 096, People's Republic of China %A Zhiqun Li %+ National ASIC System Engineering Research Center, Southeast University, Nanjing, Jiangsu 210 096, People's Republic of China %K double-channel p-type lateral extended drain MOS transistor %K PDP data driver IC %K channel resistor %K PDP system %K analytical model %K energy recovery circuit %K charge time %K plasma display panel data driver integrated circuit %K DPLD MOS transistor %K ERC efficiency %X An analytical model is proposed to analyse the energy recovery circuit (ERC) efficiency of plasma display panel (PDP) data driver integrated circuit (IC). The experimental measurements agree with the analysis results very well. The analysis results show that the ERC efficiency of PDP data driver IC is influenced by three factors: the value of charge time T ERC, the channel resistor R on and the capacitance of C L. The range of T ERC is restricted in actual PDP system. C L is determined by physical parameters of PDP panel, and its value is nearly changeless. Therefore the ERC efficiency of PDP data driver IC can be improved significantly by using superior DPLD (double-channel p-type lateral extended drain metal oxidesemi conductor) transistor that has smaller R on. %@ 1751-858X %T Analytical model for energy recovery circuit of plasma display panel data driver integrated circuit %B IET Circuits, Devices & Systems %D March 2013 %V 7 %N 2 %P 74-80 %I Institution of Engineering and Technology %U https://digital-library.theiet.org/;jsessionid=74kf6qan1atca.x-iet-live-01content/journals/10.1049/iet-cds.2012.0249 %G EN