A 0.38 V near/sub-V T digitally controlled low-dropout regulator with enhanced power supply noise rejection in 90 nm CMOS process
- Author(s): Yongtae Kim 1 and Peng Li 1
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View affiliations
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Affiliations:
1:
Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX 77843, USA
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Affiliations:
1:
Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX 77843, USA
- Source:
Volume 7, Issue 1,
January 2013,
p.
31 – 41
DOI: 10.1049/iet-cds.2012.0114 , Print ISSN 1751-858X, Online ISSN 1751-8598
This study describes a 0.38 V digitally controlled low-dropout (LDO) voltage regulator enabling dynamic voltage scaling (DVS) for near/sub-threshold applications. For operating at an ultra-low supply voltage, analogue components are replaced in conventional LDOs with digital counterparts. Especially, a digital reference control that is based on a replica circuit is proposed to improve power supply noise rejection and line regulation of the LDO. The proposed LDO has been designed in a 90 nm regular V T complementary metal oxide semiconductor technology. The LDO can regulate the output voltage from 0.12 to 0.32 V with a supply voltage of 0.38 V. Furthermore, it reaches the current efficiency of 99.3% and the power efficiency of 83.6%, respectively, at a load current of 1 mA. The digitally controllable DVS with 3 mV resolution is achieved.
Inspec keywords: voltage regulators; CMOS integrated circuits; power supply circuits
Other keywords: DVS; voltage 0.38 V; near-sub-threshold application; near-sub-VT digitally controlled low-dropout voltage regulator; ultra-low power supply noise rejection; efficiency 83.6 percent; voltage 0.12 V to 0.32 V; size 90 nm; digital reference control; dynamic voltage scaling; current 1 mA; voltage 3 mV; efficiency 99.3 percent; regular VT complementary metal oxide semiconductor technology; line regulation; LDO
Subjects: Power electronics, supply and supervisory circuits; CMOS integrated circuits
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