© The Institution of Engineering and Technology
The authors fabricated bottom-gate (BG) back-channel etched (BCE) thin-film transistors with hydrogenated polymorphous silicon (pm-Si:H) as the channel material. This material is obtained using the same low-cost plasma-enhanced chemical vapour deposition (PECVD) techniques as amorphous silicon. The authors first show the improvement of the threshold voltage stability of pm-Si:H TFTs under bias stress compared to a-Si:H counterparts. Then, pm-Si:H TFTs degradation is investigated under different gate bias stress conditions. It has been found that the degradation mechanisms are dependent on the gate stress conditions involving state creation in the channel material and charge trapping at the channel/gate SiNx interface.
References
-
-
1)
-
B. Hekmatshoar ,
K.H. Cherenack ,
A.Z. Kattamis ,
K. Long ,
S. Wagner ,
J.C. Sturm
.
Highly stable amorphous silicon thin-film transistors on clear plastic.
Appl. Phys. Lett.
-
2)
-
M.J. Powell ,
C. van Berkel ,
J.R. Hughes
.
Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors.
Appl. Phys. Lett.
-
3)
-
J.H. Lee ,
W.J. Nam ,
B.K. Kim ,
H.S. Choi ,
Y.M. Ha ,
M.K. Han
.
A new poly-Si TFT current-mirror pixel for active matrix organic light emitting diode.
IEEE Electron Devices
,
830 -
833
-
4)
-
M.R. Esmaeili-Rad ,
F. Li ,
A. Sazonov ,
A. Nathan
.
Stability of nanocrystalline silicon bottom-gate thin film transistors with silicon nitride gate dielectric.
J. Appl. Phys.
-
5)
-
P. Roca i Cabarrocas ,
S. Hamma ,
S.N. Sharma ,
G. Viera ,
E. Bertran ,
J. Costa
.
Nanoparticle formation in low-pressure silane plasmas: bridging the gap between a-Si:H and µc-Si films.
J. Non-Cryst. Solids
,
871 -
875
-
6)
-
Dosev, D.: `Fabrication, characterisation and modelling of nanocristalline thin-film transistors obtained by hot-wire chemical vapour deposition', 2003, PhD, Universitat politècnica de Catalunya (Barcelona).
-
7)
-
W.B. Jackson ,
M.D. Moyer
.
Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: the role of hydrogen.
Phys. Rev. B
-
8)
-
A. Rolland ,
J. Richard ,
J.P. Kleider ,
D. Mencaraglia
.
Electrical properties of amorphous silicon transistors and MIS-devices: comparative study of top nitride and bottom nitride configurations.
J. Electrochem. Soc.
-
9)
-
C. van Berkel ,
M.J. Powell
.
Resolution of amorphous silicon thin-film transistors instability mechanisms using ambipolar transistors.
Appl. Phys. Lett.
-
10)
-
M.J. Powell
.
Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistors.
Appl. Phys. Lett.
-
11)
-
A.T. Hatzopoulos ,
N. Arpatzanis ,
D.H. Tassis
.
Stability of amorphous-silicon and nanocrystalline silicon thin-film transistors under DC and AC stress.
IEEE Trans. Electron Devices
-
12)
-
T.J. King ,
M.G. Hack ,
I.W. Wu
.
Effective density-of-states distributions for accurate modelling of polycrystalline-silicon thin-film transistors.
J. Appl. Phys.
-
13)
-
Templier, F., Oudwan, M., Sermet, F., Demars, P.: `Mechanisms of threshold voltage drift in nanocrystalline thin-film transistors for active-matrix displays', Proc. Third Int. ITC Conf., 2007, Roma, Italy.
-
14)
-
N. Arpatzanis ,
A.T. Hatzopoulos ,
D.H. Tassis
.
Degradation of n-channel a-Si:H/nc-Si:H bilayer thin-film transistors under DC electrical stress.
Microelectron. Reliab.
-
15)
-
M. Oudwan ,
O. Moustapha ,
A. Abramov ,
D. Daineka ,
Y. Bonnassieux ,
P. Roca i Cabarrocas
.
Threshold voltage shift under electrical stress in amorphous, polymorphous and microcrystalline silicon bottomgate thin-film transistors.
Phys. Status Solidi A
-
16)
-
A. Fontcuberta i Morral ,
H. Hofmeister ,
P. Roca i Cabarrocas
.
Structure of plasma-deposited polymorphous silicon.
J. Non-Cryst. Solids
,
284 -
289
http://iet.metastore.ingenta.com/content/journals/10.1049/iet-cds.2010.0367
Related content
content/journals/10.1049/iet-cds.2010.0367
pub_keyword,iet_inspecKeyword,pub_concept
6
6