Alpha-particle-induced effects in partially depleted silicon on insulator device: with and without body contact

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Alpha-particle-induced effects in partially depleted silicon on insulator device: with and without body contact

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With the continuous downscaling of CMOS technologies, reliability has become one of the major bottlenecks in the evolution of next generation systems. The radiation-induced soft errors have become one of the most important and challenging failure mechanisms in the modern semi-conductor devices. The authors present an in-depth analysis of alpha-particle-induced effects in deep submicron partially depleted silicon on insulator (PD-SOI) device. Device with body contact as well as device without body contact is analysed. The process and device simulations are done with the latest models. Electrical parameter extraction under different energies of an alpha particle is carried out.

Inspec keywords: semiconductor device reliability; CMOS integrated circuits; alpha-particle effects; failure analysis; silicon-on-insulator; semiconductor process modelling

Other keywords: semiconductor devices; PD-SOI device; deep submicron partially depleted silicon on insulator device; next generation systems; electrical parameter extraction; device simulations; CMOS technology; radiation-induced soft errors; failure mechanisms; in-depth analysis; process simulation; alpha-particle-induced effects

Subjects: Semiconductor process modelling and simulation; Radiation effects (semiconductor technology); Metal-insulator-semiconductor structures; Reliability; CMOS integrated circuits

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