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A simple, yet efficient twodimensional (2D) model for the dopingdependent subthreshold swing characteristics of symmetric doublegate (DG) MOSFETs has been presented. The 2D Poisson's equation has been solved by using parabolic potential approximation method to obtain the 2D channel potential function of the device. A closedform expression for the dopingdependent effective current conducting path distance (d_{eff}) measured with respect to the centre of the channel of the symmetric DG MOSFET has been presented. Finally, the closedform expression of the conducting path distance parameter d_{eff} has been utilised to obtain the subthreshold swing model of the device. The validity of the proposed model has been shown by comparing the analytical results with numerical simulation data obtained by using the commercially available ATLAS™ device simulator.
References


1)

L. Huaxin ,
Y. Taur
.
An analytic potential model for symmetric and asymmetric DG MOSFETs.
IEEE Trans. Electron Devices
,
5 ,
1161 
1168

2)

O. Moldovan ,
A. Cerdeira ,
D. Jiménez
.
Compact model for highlydoped doublegate SOI MOSFETs targeting baseband analog applications.
SolidState Electron.
,
5 ,
655 
661

3)

A. Cerdeira ,
B. Iñiguez ,
M. Estrada
.
Compact model for short channel symmetric doped doublegate MOSFETs.
SolidState Electron.
,
7 ,
1064 
1070

4)

Y. Taur ,
L. Xiaoping ,
W. Wei ,
L. Huaxin
.
A continuous, analytic draincurrent model for DG MOSFETs.
IEEE Electron Device Lett.
,
2 ,
107 
109

5)

V. Hariharan ,
J. Vasi ,
V.R. Rao
.
Drain current model including velocity saturation for symmetric doublegate MOSFETs.
IEEE Trans. Electron Devices
,
8 ,
2173 
2180

6)

H. Lu ,
W.Y. Lu ,
Y. Taur
.
Effect of body doping on doublegate MOSFET characteristics.
Semicond. Sci. Technol.
,
1

7)

M. Reyboz ,
O. Rozeau ,
T. Poiroux ,
P. Martin ,
J. Jomaah
.
An explicit analytical chargebased model of undoped independent doublegate MOSFETs.
SolidState Electron.
,
7 ,
1276 
1282

8)

J. He ,
W. Bian ,
Y. Tao
.
An explicit current–voltage model for undoped doublegate MOSFETs based on accurate yet analytic approximation to the carrier concentration.
SolidState Electron.
,
1 ,
179 
185

9)

R.K. Sharma ,
R. Gupta ,
M. Gupta ,
R.S. Gupta
.
Graded channel architecture: the solution for misaligned DG FD SOI nMOSFETs.
Semicond. Sci. Technol.
,
7

10)

A. Cerdeira ,
O. Moldovan ,
B. Iñiguez ,
M. Estrada
.
Modeling of potentials and threshold voltage for symmetric doped doublegate MOSFETs.
SolidState Electron.
,
5 ,
830 
837

11)

G. Pie ,
N. Weiping ,
A.V. Kammula ,
B.A. Minch ,
E.C.C. Kan
.
A physical compact model of DG MOSFET for mixedsignal circuit applications. Part I. Model description.
IEEE Trans. Electron Devices
,
10 ,
2135 
2143

12)

D. Munteanu ,
J.L. Autran ,
X. Loussier ,
S. Harrison ,
R. Cerutti ,
T. Skotnicki
.
Quantum shortchannel compact modelling of draincurrent in doublegate MOSFET.
SolidState Electron.
,
4 ,
680 
686

13)

D. Munteanu ,
J.L. Autran ,
S. Harrison ,
K. Nehari ,
O. Tintori ,
T. Skotnicki
.
Compact model of the quantum shortchannel threshold voltage in symmetric doublegate MOSFET.
Mol. Sim.
,
12 ,
831 
837

14)

P.M. Solomon ,
K.W. Guarini ,
Y. Zhang
.
Two gates are better than one [doublegate MOSFET process].
IEEE Circuits Devices Mag.
,
1 ,
48 
62

15)

J.W. Han ,
C.J. Kim ,
Y.K. Choi
.
Universal potential model in tied and separated doublegate MOSFETs with consideration of symmetric and separated asymmetric structure.
IEEE Trans. Electron Devices
,
6 ,
1472 
1479

16)

S. Bhattacherjee ,
A. Biswas
.
Modeling of threshold voltage and subthreshold slope of nanoscale DG MOSFETs.
Semicond. Sci. Technol.
,
1

17)

Agarwal, B.: `Comparative scaling opportunities of MOSFET structures for giga scale integration (GSI)', 1994, PhD, Rensselaer Polytech. Inst., Troy, NY.

18)

R.H. Yan ,
A. Qurmazd ,
K.F. Lee
.
Scaling the Si MOSFET: from bulk to SOI to bulk.
IEEE Trans. Electron Devices
,
7 ,
1704 
1710

19)

K. Suzuki ,
T. Tanaka ,
Y. Tosaka ,
H. Horie ,
Y. Arimoto
.
Scaling theory for doublegate SOI MOSFETs.
IEEE Trans. Electron Devices
,
12 ,
2326 
2329

20)

Y. Tosaka ,
K. Suzuki ,
T. Sugii
.
Scalingparameterdependent model for subthreshold swing S in doublegate SOI MOSFETs.
IEEE Trans. Electron Devices
,
11 ,
466 
468

21)

B. Diagne ,
F. Prégaldiny ,
C. Lallement ,
J.M. Sallese ,
F. Krummenacher
.
Explicit compact model for symmetric doublegate MOSFETs including solutions for smallgeometry effects.
SolidState Electron.
,
99 
106

22)

Q. Chen ,
B. Agarwal ,
J.D. Meindl
.
A comprehensive analytical subthreshold swing (S) model for doublegate MOSFETs.
IEEE Trans. Electron Devices
,
6 ,
1086 
1090

23)

O. SangHyun ,
D. Monroe ,
J.M. Hergenrother
.
Analytic description of shortchannel effects in fullydepleted doublegate and cylindrical, surroundinggate MOSFETs.
IEEE Electron Device Lett.
,
9 ,
445 
447

24)

T.K. Chiang
.
A novel scalingparameterdependent subthreshold swing model for doublegate (DG) SOI MOSFETs: including effective conducting path effect (ECPE).
Semicond. Sci. Technol.
,
12 ,
1386 
1390

25)

H.A. El Hamid ,
J.R. Guitart ,
B. Iniguez
.
Twodimensional analytical threshold voltage and subthreshold swing models of undoped symmetric doublegate MOSFETs.
IEEE Trans. Electron Devices
,
6 ,
1402 
1408

26)

Silvaco Int. 2004 ATLAS User's Manual A 2D numerical device simulator, http://www.silvaco.com.

27)

A. OrtizConde ,
F.J. GarciaSanchez ,
S. Malobabic
.
Analytic solution of the channel potential in undoped symmetric dualgate MOSFETs.
IEEE Trans. Electron Devices
,
7 ,
1669 
1672

28)

Y. Taur ,
T.H. Ning
.
(1998)
Fundamentals of modern VLSI devices.

29)

L. Xiaoping ,
Y. Taur
.
A 2D analytical solution for SCEs in DG MOSFETs.
IEEE Trans. Electron Devices
,
1385 
1391

30)

J. Spanier ,
K.B. Oldham
.
(1987)
Dawson's integral’, in ‘An atlas of functions.

31)

A. Choudhury ,
P. Roy
.
A fairly accurate approximation to the area under normal curve.
Commun. Stat. Sim. Comp.
,
1485 
1492

32)

http://mathworld.wolfram.com/DawsonsIntegral.html.

33)

Y. Taur
.
Analytic solutions of charge and capacitance in symmetric and asymmetric doublegate MOSFETs.
IEEE Trans. Electron Devices
,
12 ,
2861 
2869
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