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Modelling of doping-dependent subthreshold swing of symmetric double-gate MOSFETs

Modelling of doping-dependent subthreshold swing of symmetric double-gate MOSFETs

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A simple, yet efficient two-dimensional (2D) model for the doping-dependent subthreshold swing characteristics of symmetric double-gate (DG) MOSFETs has been presented. The 2D Poisson's equation has been solved by using parabolic potential approximation method to obtain the 2D channel potential function of the device. A closed-form expression for the doping-dependent effective current conducting path distance (deff) measured with respect to the centre of the channel of the symmetric DG MOSFET has been presented. Finally, the closed-form expression of the conducting path distance parameter deff has been utilised to obtain the subthreshold swing model of the device. The validity of the proposed model has been shown by comparing the analytical results with numerical simulation data obtained by using the commercially available ATLAS™ device simulator.

References

    1. 1)
      • Agarwal, B.: `Comparative scaling opportunities of MOSFET structures for giga scale integration (GSI)', 1994, PhD, Rensselaer Polytech. Inst., Troy, NY.
    2. 2)
      • D. Munteanu , J.-L. Autran , X. Loussier , S. Harrison , R. Cerutti , T. Skotnicki . Quantum short-channel compact modelling of drain-current in double-gate MOSFET. Solid-State Electron. , 4 , 680 - 686
    3. 3)
      • Silvaco Int. 2004 ATLAS User's Manual A 2D numerical device simulator, http://www.silvaco.com.
    4. 4)
      • A. Choudhury , P. Roy . A fairly accurate approximation to the area under normal curve. Commun. Stat. Sim. Comp. , 1485 - 1492
    5. 5)
      • http://mathworld.wolfram.com/DawsonsIntegral.html.
    6. 6)
      • J.W. Han , C.J. Kim , Y.K. Choi . Universal potential model in tied and separated double-gate MOSFETs with consideration of symmetric and separated asymmetric structure. IEEE Trans. Electron Devices , 6 , 1472 - 1479
    7. 7)
      • O. Sang-Hyun , D. Monroe , J.M. Hergenrother . Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs. IEEE Electron Device Lett. , 9 , 445 - 447
    8. 8)
      • L. Huaxin , Y. Taur . An analytic potential model for symmetric and asymmetric DG MOSFETs. IEEE Trans. Electron Devices , 5 , 1161 - 1168
    9. 9)
      • H. Lu , W.-Y. Lu , Y. Taur . Effect of body doping on double-gate MOSFET characteristics. Semicond. Sci. Technol. , 1
    10. 10)
      • J. Spanier , K.B. Oldham . (1987) Dawson's integral’, in ‘An atlas of functions.
    11. 11)
      • S. Bhattacherjee , A. Biswas . Modeling of threshold voltage and subthreshold slope of nanoscale DG MOSFETs. Semicond. Sci. Technol. , 1
    12. 12)
      • L. Xiaoping , Y. Taur . A 2-D analytical solution for SCEs in DG MOSFETs. IEEE Trans. Electron Devices , 1385 - 1391
    13. 13)
      • O. Moldovan , A. Cerdeira , D. Jiménez . Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications. Solid-State Electron. , 5 , 655 - 661
    14. 14)
      • Q. Chen , B. Agarwal , J.D. Meindl . A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs. IEEE Trans. Electron Devices , 6 , 1086 - 1090
    15. 15)
      • B. Diagne , F. Prégaldiny , C. Lallement , J.-M. Sallese , F. Krummenacher . Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects. Solid-State Electron. , 99 - 106
    16. 16)
      • R.H. Yan , A. Qurmazd , K.F. Lee . Scaling the Si MOSFET: from bulk to SOI to bulk. IEEE Trans. Electron Devices , 7 , 1704 - 1710
    17. 17)
      • M. Reyboz , O. Rozeau , T. Poiroux , P. Martin , J. Jomaah . An explicit analytical charge-based model of undoped independent double-gate MOSFETs. Solid-State Electron. , 7 , 1276 - 1282
    18. 18)
      • V. Hariharan , J. Vasi , V.R. Rao . Drain current model including velocity saturation for symmetric double-gate MOSFETs. IEEE Trans. Electron Devices , 8 , 2173 - 2180
    19. 19)
      • H.A. El Hamid , J.R. Guitart , B. Iniguez . Two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double-gate MOSFETs. IEEE Trans. Electron Devices , 6 , 1402 - 1408
    20. 20)
      • P.M. Solomon , K.W. Guarini , Y. Zhang . Two gates are better than one [double-gate MOSFET process]. IEEE Circuits Devices Mag. , 1 , 48 - 62
    21. 21)
      • Y. Taur . Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs. IEEE Trans. Electron Devices , 12 , 2861 - 2869
    22. 22)
      • Y. Taur , L. Xiaoping , W. Wei , L. Huaxin . A continuous, analytic drain-current model for DG MOSFETs. IEEE Electron Device Lett. , 2 , 107 - 109
    23. 23)
      • G. Pie , N. Weiping , A.V. Kammula , B.A. Minch , E.C.C. Kan . A physical compact model of DG MOSFET for mixed-signal circuit applications. Part I. Model description. IEEE Trans. Electron Devices , 10 , 2135 - 2143
    24. 24)
      • K. Suzuki , T. Tanaka , Y. Tosaka , H. Horie , Y. Arimoto . Scaling theory for double-gate SOI MOSFETs. IEEE Trans. Electron Devices , 12 , 2326 - 2329
    25. 25)
      • J. He , W. Bian , Y. Tao . An explicit current–voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration. Solid-State Electron. , 1 , 179 - 185
    26. 26)
      • T.K. Chiang . A novel scaling-parameter-dependent subthreshold swing model for double-gate (DG) SOI MOSFETs: including effective conducting path effect (ECPE). Semicond. Sci. Technol. , 12 , 1386 - 1390
    27. 27)
      • A. Cerdeira , B. Iñiguez , M. Estrada . Compact model for short channel symmetric doped double-gate MOSFETs. Solid-State Electron. , 7 , 1064 - 1070
    28. 28)
      • R.K. Sharma , R. Gupta , M. Gupta , R.S. Gupta . Graded channel architecture: the solution for misaligned DG FD SOI n-MOSFETs. Semicond. Sci. Technol. , 7
    29. 29)
      • A. Ortiz-Conde , F.J. Garcia-Sanchez , S. Malobabic . Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs. IEEE Trans. Electron Devices , 7 , 1669 - 1672
    30. 30)
      • Y. Tosaka , K. Suzuki , T. Sugii . Scaling-parameter-dependent model for subthreshold swing S in double-gate SOI MOSFETs. IEEE Trans. Electron Devices , 11 , 466 - 468
    31. 31)
      • D. Munteanu , J.L. Autran , S. Harrison , K. Nehari , O. Tintori , T. Skotnicki . Compact model of the quantum short-channel threshold voltage in symmetric double-gate MOSFET. Mol. Sim. , 12 , 831 - 837
    32. 32)
      • A. Cerdeira , O. Moldovan , B. Iñiguez , M. Estrada . Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs. Solid-State Electron. , 5 , 830 - 837
    33. 33)
      • Y. Taur , T.H. Ning . (1998) Fundamentals of modern VLSI devices.
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