Design freedom gets the brush-off [chip design]

Access Full Text

Design freedom gets the brush-off [chip design]

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Engineering & Technology — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Various techniques have been used to push processes this far past the point where diffraction effects kick in. These have included using phase-shift masking to turn diffraction to the designers' advantage, and optical proximity correction (OPC) techniques, such as adding 'ears' to the corners of layout elements so that they are printed as right angles. The problem is that chipmakers are applying ever more Byzantine combinations of these techniques to keep up with shrinking process dimensions, and getting diminishing returns. Device characteristics are varying wildly as more aggressive OPC techniques are pressed into action. The chip equipment industry has been working to solve this for years, but couldn't persuade its customers that moving to 157nm illumination sources was worth the development costs given the marginal advantages it would bring over 193nm light. Unfortunately, the development of EUV lithography is fraught with difficulties. The solution to the 65 nm and 45 nm design for manufacture is new DFM routers. As they are DFM-aware they can run the rule-based checks and ensure that around 80 percent of the DFM problems are avoided. The layout team can then use model- based DFM to take care of the remaining 20 percent.

Inspec keywords: integrated circuit manufacture; design for manufacture; nanolithography; photoresists; proximity effect (lithography); phase shifting masks

Other keywords: optical proximity correction; phase-shift masking; DFM router; OPC technique; design for manufacture; rule-based checks; chip equipment industry; diffraction effect; process dimension shrinking techniques

Subjects: Semiconductor integrated circuit design, layout, modelling and testing; Nanometre-scale semiconductor fabrication technology; Semiconductor industry; Lithography (semiconductor technology); Design

http://iet.metastore.ingenta.com/content/journals/10.1049/et_20081306
Loading

Related content

content/journals/10.1049/et_20081306
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading