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Cryogenic RF switch using III-nitride MOSHFETs

Cryogenic RF switch using III-nitride MOSHFETs

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The cryogenic operation of a low-loss RF switch using a AlGaN/GaN metal-oxide semiconductor heterostructure field effect transistor is reported. At 77K the channel resistance of the MOSHFET is three times lower and the contact resistance is 20% lower compared to room temperature. As a result, the performance of the MOSHFET RF switch at 77K is even superior to that at room temperature.

http://iet.metastore.ingenta.com/content/journals/10.1049/el_20092562
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