© The Institution of Engineering and Technology
GaN optoelectronic devices based on nanowires offer potential advantages that merit further investigation for applications in solid-state lighting and displays. Reported is the operation GaN nanowire, light-emitting diodes that are based on a uniform and scalable nanowire process. For light-emitting diodes consisting of approximately 300 nanowire pn homojunctions, operating in parallel, the electroluminescence intensity was found to grow superlinearly with current. For individual nanowire light-emitting diodes the forward and reverse leakage current was<1 pA. The low leakage current of individual light-emitting nanowire diodes indicates that surface effects do not dominate the electrical behaviour of these LEDs.
References
-
-
1)
-
T. Onuma ,
H. Amaike ,
M. Kubota ,
K. Okamoto ,
H. Ohta ,
J. Ichihara ,
H. Takasu ,
S.F. Chichibu
.
Quantum-confined Stark effects in the m-plane In0.15Ga0.85 N/GaN multiple quantum well blue light-emitting diode fabricated on low defect density freestanding GaN substrate.
Appl. Phys. Lett.
,
181903 -
181901
-
2)
-
S.D. Hersee ,
X. Sun ,
X. Wang
.
The controlled growth of GaN nanowires.
Nano Lett.
,
8 ,
1808 -
1811
-
3)
-
H.M. Kim ,
T.W. Kang ,
K.S. Chung
.
Nanoscale UV LEDs using wide-bandgap GaN nanorods.
Adv. Mater.
,
567 -
569
-
4)
-
A. Kikuchi ,
M. Kawai ,
M. Tada ,
K. Kishino
.
InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) Si substrate.
Jpn. J. Appl. Phys.
,
L1524 -
L1526
-
5)
-
S. Ishizawa ,
K. Kishino ,
A. Kikuchi
.
Selective-area growth of GaN nanocolumns on Si(111) substrates using nitrided Al nanopatterns by RF-plasma-assisted molecular-beam epitaxy.
Appl. Phys. Express.
,
015006 -
015001
-
6)
-
J. Yoo ,
Y.-J. Hong ,
S.J. An ,
G.-C. Yi ,
B. Chon ,
T. Joo ,
J.-W. Kim ,
J.-S. Lee
.
Photoluminescent characteristics of Ni-catalyzed GaN nanowires.
Appl. Phys. Lett.
,
043124 -
043121
-
7)
-
S.H. Zaidi ,
S.R.J. Brueck
.
Interferometric lithography for nanoscale fabrication.
Proc. SPIE.
,
2 -
8
-
8)
-
M. Ferdous ,
X. Wang ,
M. Fairchild ,
S.D. Hersee
.
Effect of threading defects on InGaN/GaN multiple quantum well light emitting diodes.
Appl. Phys. Lett.
,
231107 -
231101
-
9)
-
H.M. Kim ,
Y.-H. Cho ,
H. Lee ,
S.I. Kim ,
S.R. Ryu ,
D.Y. Kim ,
T.W. Kang ,
K.S. Chung
.
High-brightness light emitting diodes using dislocation free InGaN/GaN multiquantum-well nanorod arrays.
Nano Lett.
,
1059 -
1062
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20092391
Related content
content/journals/10.1049/el_20092391
pub_keyword,iet_inspecKeyword,pub_concept
6
6