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Passively modelocked 832 nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3 ps pulses at 1.9 GHz repetition rate

Passively modelocked 832 nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3 ps pulses at 1.9 GHz repetition rate

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A passively modelocked 832 nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3 ps at a repetition rate of 1.9 GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200 ps, respectively, was used to form the pulses.

References

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      • Holm, M.A., Cusumano, P., Burns, D., Ferguson, A.I., Dawson, M.D.: `Mode-locked operation of a diode-pumped, external-cavity GaAs/ALGaAs surface emitting laser', Conf on Lasers and Electro-Optics, 1999.
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      • A.C. Tropper , H.D. Foreman , A. Garnache , K.G. Wilcox , S.H. Hoogland . Vertical-external-cavity semiconductor lasers. J. Phys. D Appl. Phys.
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