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A nonvolatile ferroelectric complementary metal-oxide-semiconductor (CMOS) circuit with both logic and memory functions is proposed as a new application of ferroelectric field effect transistors. The logic and memory operations of a NOT-logic ferroelectric CMOS device is demonstrated. Nondestructive readings of high and low output voltage levels of the device were performed. Data retention was measured up to105 s (1.2 days).
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_20083230
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