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Basic operation of novel ferroelectric CMOS circuits

Basic operation of novel ferroelectric CMOS circuits

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A nonvolatile ferroelectric complementary metal-oxide-semiconductor (CMOS) circuit with both logic and memory functions is proposed as a new application of ferroelectric field effect transistors. The logic and memory operations of a NOT-logic ferroelectric CMOS device is demonstrated. Nondestructive readings of high and low output voltage levels of the device were performed. Data retention was measured up to105 s (1.2 days).

References

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      • J.L. Moll , Y. Tarui . A new solid state memory resistor. IEEE Trans. Electron Devices , 338 - 339
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      • M. Takahashi , S. Sakai . Self-aligned-gate metal/ferroelectric/insulator/semiconductor field-effect transistors with long memory retention. Jpn. J. Appl. Phys. , 25 , L800 - L802
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