© The Institution of Engineering and Technology
AlGaN-based multiple-quantum-well light-emitting diodes (LEDs) with peak emission at UV-C region of 264 nm were successfully gown on AlN template using metal organic chemical vapour deposition. It was found that a subband emission around 320 nm can be drastically reduced by inserting a thin 1 nm-thick AlN interlayer between the active region and p-type layers. This is presumably a result of the suppression of electron overflow or Mg diffusion. It was also observed that the output power in LEDs was increased up to more than 20 times by changing the layer construction.
References
-
-
1)
-
M. Shatalov ,
A. Chitnis ,
V. Mandavilli ,
R. Pachipulusu ,
J.P. Zhang ,
V. Adivarahan ,
S. Wu ,
G. Simin ,
M.A. Khan
.
Time-resolved electroluminescence of AlGaN-based light-emitting-diodes with emission at 285 nm.
Appl. Phys. Lett.
,
2 ,
167 -
169
-
2)
-
W.H. Sun ,
J.P. Zhang ,
V. Adivarahan ,
A. Chitnis ,
M. Shatalov ,
S. Wu ,
V. Mandavilli ,
J.W. Yang ,
M.A. Khan
.
AlGaN-based 280 nm light-emitting diodes with continuous wave powers in excess of 1.5 mW.
Appl. Phys. Lett.
,
4 ,
531 -
533
-
3)
-
V. Adivarahan ,
S. Wu ,
J.P. Zhang ,
A. Chitnis ,
M. Shatalov ,
V. Mandavilli ,
R. Gaska ,
M.A. Khan
.
High-efficiency 269 nm emission deep ultraviolet light-emitting diodes.
Appl. Phys. Lett.
,
23 ,
4762 -
4764
-
4)
-
A.J. Fischer ,
A.A. Allerman ,
M.H. Crawford ,
K.H.A. Bogart ,
S.R. Lee ,
R.J. Kaplar ,
W.W. Chow ,
S.R. Kurtz ,
K.M. Fullmer ,
J.J. Figiel
.
Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels.
Appl. Phys. Lett.
,
17 ,
3394 -
3396
-
5)
-
J.P. Zhang ,
S. Wu ,
S. Rai ,
V. Mandavilli ,
V. Adivarahan ,
A. Chitnis ,
M. Shatalov ,
M.A. Khan
.
AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission.
Appl. Phys. Lett.
,
17 ,
3456 -
3458
-
6)
-
A. Yasan ,
R. McClintock ,
K. Mayes ,
D.H. Kim ,
P. Kung ,
M. Razeghi
.
Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes.
Appl. Phys. Lett.
,
20 ,
4083 -
4085
-
7)
-
T. Shibata ,
K. Asai ,
S. Sumiya ,
M. Mouri ,
M. Tanaka ,
O. Oda ,
H. Katsukawa ,
H. Miyake ,
K. Hiramatsu
.
High-quality AlN epitaxial films on (0001)-faced sapphire and 6H-SiC substrate.
Phys. Status Solidi C
,
7 ,
2023 -
2026
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20082753
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