IET Digital Library: Erratum for ‘1 µm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 µS/μm’

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Erratum for ‘1 µm gate length, In_0.75Ga_0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 µS/μm’

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Author(s): R.J.W. Hill ; R. Droopad ; D.A.J. Moran ; X. Li ; H. Zhou ; D. Macintyre ; S. Thoms ; O. Ignatova ; A. Asenov ; K. Rajagopalan ; P. Fejes ; I.G. Thayne ; M. Passlack
Source: Volume 44, Issue 21, 9 October 2008, p. 1283 – 1284
DOI: 10.1049/el:20082747 , Print ISSN 0013-5194, Online ISSN 1350-911X

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1 µm gate length, In_0.75Ga_0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 µS/μm

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