Modelling of band-to-band tunnelling in silicon-on-insulator transistor with degenerately doped floating body

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Modelling of band-to-band tunnelling in silicon-on-insulator transistor with degenerately doped floating body

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Published

Numerical simulations based on a novel band-to-band tunnelling model and DC quasi-stationary method have been performed for a field-induced inter-band tunnelling effect transistor with a degenerately doped floating body and source/drain tunnel junction. Carrier injection through the tunnel junctions into a floating body is responsible for negative-differential conductance as well as negative-differential transconductance. Simulation results for various device structures show that a gate field-effect on the tunnel junctions is a key design factor to improve device characteristics.

Inspec keywords: charge injection; semiconductor doping; electric admittance; silicon-on-insulator; junction gate field effect transistors; tunnel transistors

Other keywords: device structures; tunnel junctions; Si; DC quasistationary method; source-drain tunnel junction; silicon-on-insulator transistor; doped floating body; field-induced interband tunnelling effect transistor; gate field-effect; band-to-band tunnelling; carrier injection; negative-differential conductance; negative-differential transconductance

Subjects: Semiconductor doping; Other field effect devices

References

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      • K.R. Kim , D.H. Kim , K.-W. Song , G. Baek , H.H. Kim , J.I. Huh , J.D. Lee , B.-G. Park . Silicon-based field-induced band-to-band tunneling effect transistor. IEEE Electron Device Lett. , 6 , 439 - 441
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      • E.O. Kane . Theory of Tunneling. J. Appl. Phys. , 1 , 83 - 91
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      • Kim, K.R., Dutton, R.W.: `Effect of local electric field and effective tunnel mass on the simulation of band-to-band tunnel diode model', Proc. SISPAD, September 2005, p. 159–162.
    4. 4)
      • Nirschl, Th., Wang, P.-F., Weber, C., Sedlmeir, J., Heinrich, R., Kakoschke, R., Schrufer, K., Holz, J., Pacha, C., Schulz, T., Ostermayr, M., Olbrich, A., Georgakos, G., Ruderer, E., Hansch, W., Schmitt-Landsiedel, D.: `The tunnelling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes', Proc. IEDM, December 2004, p. 195–198.
    5. 5)
      • S.-H. Song , K.R. Kim , S. Kang , J.H. Kim , J.I. Huh , K.C. Kang , K.-W. Song , J.D. Lee , B.-G. Park . Analytical modelling of field-induced interband tunneling-effect transistors and its application. IEEE Trans. Nanotechnol. , 3 , 192 - 200
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