© The Institution of Engineering and Technology
Numerical simulations based on a novel band-to-band tunnelling model and DC quasi-stationary method have been performed for a field-induced inter-band tunnelling effect transistor with a degenerately doped floating body and source/drain tunnel junction. Carrier injection through the tunnel junctions into a floating body is responsible for negative-differential conductance as well as negative-differential transconductance. Simulation results for various device structures show that a gate field-effect on the tunnel junctions is a key design factor to improve device characteristics.
References
-
-
1)
-
K.R. Kim ,
D.H. Kim ,
K.-W. Song ,
G. Baek ,
H.H. Kim ,
J.I. Huh ,
J.D. Lee ,
B.-G. Park
.
Silicon-based field-induced band-to-band tunneling effect transistor.
IEEE Electron Device Lett.
,
6 ,
439 -
441
-
2)
-
E.O. Kane
.
Theory of Tunneling.
J. Appl. Phys.
,
1 ,
83 -
91
-
3)
-
Kim, K.R., Dutton, R.W.: `Effect of local electric field and effective tunnel mass on the simulation of band-to-band tunnel diode model', Proc. SISPAD, September 2005, p. 159–162.
-
4)
-
Nirschl, Th., Wang, P.-F., Weber, C., Sedlmeir, J., Heinrich, R., Kakoschke, R., Schrufer, K., Holz, J., Pacha, C., Schulz, T., Ostermayr, M., Olbrich, A., Georgakos, G., Ruderer, E., Hansch, W., Schmitt-Landsiedel, D.: `The tunnelling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes', Proc. IEDM, December 2004, p. 195–198.
-
5)
-
S.-H. Song ,
K.R. Kim ,
S. Kang ,
J.H. Kim ,
J.I. Huh ,
K.C. Kang ,
K.-W. Song ,
J.D. Lee ,
B.-G. Park
.
Analytical modelling of field-induced interband tunneling-effect transistors and its application.
IEEE Trans. Nanotechnol.
,
3 ,
192 -
200
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20082134
Related content
content/journals/10.1049/el_20082134
pub_keyword,iet_inspecKeyword,pub_concept
6
6