Optoelectronic terahertz radiation system based on femtosecond 1 µm laser pulses and GaBiAs detector

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Optoelectronic terahertz radiation system based on femtosecond 1 µm laser pulses and GaBiAs detector

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A terahertz time-domain spectroscopy system based on a femtosecond Yb:KGW laser, a narrow-gap semiconductor surface emitter, and a photoconductive detector made from an Si-doped GaBiAs epitaxial layer is demonstrated. The spectral bandwidth of the system is larger than 4 THz, and its dynamical range exceeds 60 dB.

Inspec keywords: gallium compounds; epitaxial layers; solid lasers; submillimetre wave spectroscopy; ytterbium; potassium compounds; high-speed optical techniques; photoconducting devices

Other keywords: spectral bandwidth; Yb:KGW laser; narrow-gap semiconductor surface emitter; photoconductive detector; terahertz time-domain spectroscopy system; optoelectronic terahertz radiation system; GaBiAs:Si; wavelength 1 mum; femtosecond laser pulses; GaBiAs detector; KGd(WO4)2:Yb; GaBiAs epitaxial layer

Subjects: Photoelectric devices; Solid lasers; Laser beam modulation, pulsing and switching; mode locking and tuning; Lasing action in other solids; Ultrafast optical techniques; Laser beam modulation, pulsing and switching; mode locking and tuning

References

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