Optoelectronic terahertz radiation system based on femtosecond 1 µm laser pulses and GaBiAs detector
Optoelectronic terahertz radiation system based on femtosecond 1 µm laser pulses and GaBiAs detector
- Author(s): V. Pačebutas ; A. Bičiūnas ; K. Bertulis ; A. Krotkus
- DOI: 10.1049/el:20081630
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- Author(s): V. Pačebutas 1 ; A. Bičiūnas 1 ; K. Bertulis 1 ; A. Krotkus 1
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View affiliations
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Affiliations:
1: Semiconductor Physics Institute, Vilnius, Lithuania
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Affiliations:
1: Semiconductor Physics Institute, Vilnius, Lithuania
- Source:
Volume 44, Issue 19,
11 September 2008,
p.
1154 – 1155
DOI: 10.1049/el:20081630 , Print ISSN 0013-5194, Online ISSN 1350-911X
A terahertz time-domain spectroscopy system based on a femtosecond Yb:KGW laser, a narrow-gap semiconductor surface emitter, and a photoconductive detector made from an Si-doped GaBiAs epitaxial layer is demonstrated. The spectral bandwidth of the system is larger than 4 THz, and its dynamical range exceeds 60 dB.
Inspec keywords: gallium compounds; epitaxial layers; solid lasers; submillimetre wave spectroscopy; ytterbium; potassium compounds; high-speed optical techniques; photoconducting devices
Other keywords:
Subjects: Photoelectric devices; Solid lasers; Laser beam modulation, pulsing and switching; mode locking and tuning; Lasing action in other solids; Ultrafast optical techniques; Laser beam modulation, pulsing and switching; mode locking and tuning
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