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Optoelectronic terahertz radiation system based on femtosecond 1 µm laser pulses and GaBiAs detector

Optoelectronic terahertz radiation system based on femtosecond 1 µm laser pulses and GaBiAs detector

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A terahertz time-domain spectroscopy system based on a femtosecond Yb:KGW laser, a narrow-gap semiconductor surface emitter, and a photoconductive detector made from an Si-doped GaBiAs epitaxial layer is demonstrated. The spectral bandwidth of the system is larger than 4 THz, and its dynamical range exceeds 60 dB.

References

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      • A. Major , V. Barzda , P. Piunno , S. Musikhin , U.J. Krull . An extended cavity diode-pumped femtosecond Yb:KGW laser for applications in optical DNA sensor technology based on fluorescence lifetime measurements. Opt. Express , 12 , 5285 - 5294
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      • V. Pačebutas , K. Bertulis , L. Dapkus , G. Aleksejenko , A. Krotkus , K.M. Yu , W. Waliukiewicz . Characterization of low-temperature molecular-beam-epitaxy grown GaBiAs layers. Semicond. Sci. Technol. , 819 - 823
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