Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

High performance poly-Si TFTs fabricated by continuous-wave laser annealing of metal-induced lateral crystallised silicon films

High performance poly-Si TFTs fabricated by continuous-wave laser annealing of metal-induced lateral crystallised silicon films

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

In this process, amorphous silicon was first transformed to polycrystalline silicon (poly-Si) using a metal-induced lateral crystallisation (MILC) process, followed by annealing with a continuous-wave laser lateral (λ∼532 nm) crystallisation (CLC) with an output power of 3.8 W. MILC-CLC-TFT performed far superior to MILC-TFT. The mobility of the MILC-CLC-TFT was 293 cm2/Vs, which was much higher than that of MILC TFTs (54.8 cm2/Vs). In addition, MILC-CLC TFTs showed better device uniformity and reliability.

References

    1. 1)
      • Y.T. Lin , C. Chen , J.M. Shieh , Y.J. Lee , C.L. Pan . Stability of continuous-wave laser-crystallized eplike silicon transistors. Appl. Phys. Lett. , 7
    2. 2)
    3. 3)
      • E. Robert , R. Hill , R. Abbaschian . (1992) Physical metallurgy principles.
    4. 4)
      • G.R. Hu , Y.S. Wu , C.W. Chao , H.C. Shih . Growth mechanism of laser annealing of nickel-induced lateral crystallized silicon films. Jpn. J. Appl. Phys. , 21 - 27
    5. 5)
    6. 6)
    7. 7)
    8. 8)
    9. 9)
    10. 10)
    11. 11)
      • A. Hara , M. Takei , F. Takeuchi , K. Suga , K. Yoshino , M. Chida , T. Kakehi , Y. Ebiko , Y. Sano , N. Sasaki . High performance low temperature polycrystalline silicon thin film transistors on non-alkaline glass produced using diode pumped solid state continuous wave laser lateral crystallization. Jpn. J. Appl. Phys. , 1269 - 1276
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20081620
Loading

Related content

content/journals/10.1049/el_20081620
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address