Increasing electrical conductivity in sputter-deposited Si/SiGe multilayers through electrical pulse based annealing

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Increasing electrical conductivity in sputter-deposited Si/SiGe multilayers through electrical pulse based annealing

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Low temperature deposition, by sputtering, on flexible/plastic substrates offers a relatively cheap alternative for fabricating single-/multilayer thin film devices. However, sputtering yields amorphous material, with low electrical conductivity, and requires subsequent annealing. Demonstrated is a new method of crystallisation, where controlled application of electrical pulses to sputter deposited Si/Si0.8Ge0.2 multilayers is shown to decrease the electrical resistance by as much as 80%.

Inspec keywords: multilayers; elemental semiconductors; crystallisation; electrical conductivity; silicon; silicon compounds; annealing; electrical resistivity; semiconductor thin films

Other keywords: crystallisation; multilayers; Si-SiGe; electrical pulses; annealing; electrical resistance; electrical conductivity; electrical pulse

Subjects: Elemental semiconductors; Low-dimensional structures: growth, structure and nonelectronic properties; Electrical properties of elemental semiconductors (thin films, low-dimensional and nanoscale structures); Solid-solid transitions; Other heat and thermomechanical treatments; Annealing processes in semiconductor technology

References

    1. 1)
      • S.M. Sze . (1981) Physics of semiconductor devices.
    2. 2)
      • T. Searle . (1998) Properties of amorphous silicon and its alloys.
    3. 3)
      • M.J. Kelly . (1996) Low-dimensional semiconductors: materials, physics, technology, devices, Series on Semiconductor Science and Technology.
    4. 4)
    5. 5)
      • R.E. Hummel . (2005) Electronic properties of materials.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20081544
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