Fabrication of polycrystalline 3C-SiC thin-film diodes for microsensors

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Fabrication of polycrystalline 3C-SiC thin-film diodes for microsensors

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Two series of SiC/Si Schottky and heterojunction diodes were fabricated from polycrystalline (poly) 3C-SiC thin films grown at 1150°C on Si substrates by atmospheric pressure chemical vapour deposition (APCVD) using single precursor hexamethyldisilane (HMDS: Si2(CH3)6). Both devices show good performance. In particular, from I–V and C–V curves of the Schottky diode, its threshold voltage (Vd), breakdown voltage, doping concentration, and the width of the depletion layer are 0.84 V, over 140 V, 2.7×1019 cm−3, and 61 nm, respectively.

Inspec keywords: thin films; silicon compounds; silicon; doping; Schottky diodes; chemical vapour deposition

Other keywords: depletion layer; Schottky diode; polycrystalline 3C-SiC thin-film diodes; single precursor hexamethyldisilane; microsensors; doping concentration; Si substrates; breakdown voltage; SiC-Si; heterojunction diode; atmospheric pressure chemical vapour deposition

Subjects: Junction and barrier diodes

References

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