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High-power monolithic AlGaN/GaN HEMT switch for X-band applications

High-power monolithic AlGaN/GaN HEMT switch for X-band applications

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© The Institution of Engineering and Technology
Published

The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performance: they exhibit 1 dB on-state insertion loss and better than 37 dB isolation. Power-handling measurements have shown that no compression phenomenon occurs with an input power equal to 39.5 dBm at 10 GHz.

Inspec keywords: wide band gap semiconductors; gallium compounds; III-V semiconductors; field effect transistor switches; aluminium compounds; high electron mobility transistors

Other keywords: frequency 10 GHz; X-band; insertion loss; compression phenomenon; high-power monolithic switch; microstrip technology; AlGaN-GaN; power-handling measurements

Subjects: Other field effect devices; Relays and switches

References

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      • D. Gotch . A review of technological advances in solid-state switches. Microw. J. , 11 , 24 - 34
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      • Kaper, V., Thompson, R., Prunty, T., Shealy, J.R.: `Monolithic AlGaN/GaN HEMT SPDT switch', Gallium Arsenide Applications Symp., October 2004, p. 83–86.
    3. 3)
      • Bettidi, A., Cetronio, A., De Dominicis, M., Giolo, G., Lanzieri, C., Manna, A., Peroni, M., Proietti, C., Romanini, P.: `High power GaN-HEMT microwave switches for X-band and wideband applications', IEEE Radio Frequency Integrated Circuits (RFIC) Symp., 2008, Atlanta, GA, USA, p. 329–332.
    4. 4)
      • Ezzeddine, A., Pengelly, R., Badawi, H.: `A high isolation DC to 18 GHz packaged MMIC SPDT switch', European Microwave Conf., October 1988, p. 1028–1033.
    5. 5)
      • D.E. Meharry , R.J. Lender , K. Chu , L.L. Gunter , K.E. Beech . Multi-watt wideband MMIC in GaN and GaAs. IEEE MTT-S Int. Microw. Symp. Dig. , 631 - 634
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      • Krausse, D., Quay, R., Kiefer, R., Tessmann, A., Massler, H., Leuther, A., Merkle, T., Muller, S., Schworer, C., Mikulla, M., Schlechtweg, M., Weimann, G.: `Robust GaN HEMT low-noise amplifier MMICs for X-band applications', Gallium Arsenide Applications Symp., October 2004, p. 71–74.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20081170
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