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Longitudinal junction termination technique by multiple floating buried-layers for LDMOST

Longitudinal junction termination technique by multiple floating buried-layers for LDMOST

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The longitudinal junction termination technique by multiple floating buried-layers for the lateral double-diffused MOSFET (LDMOST) is presented. In off-state, the space charges in the buried-layers generate a new electric field, and this field reduces the electric field peak at the main junction. The potential contours distribute more uniformly than those of the conventional LDMOST. Simulation results show that the breakdown voltage of the proposed structure is 1776 V, compared to 841 V of the conventional LDMOST with the same 120 µm drift length.

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