Experimental validation of PTAT for in situ temperature sensor and voltage reference

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Experimental validation of PTAT for in situ temperature sensor and voltage reference

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Published

Based on the CMOS proportional to absolute temperature principle, a combined device for voltage reference and temperature sensors is successfully implemented using a fully digital process. For a temperature range from 20 to 120°C, the experimental results show that the voltage reference has a temperature stable output of 717 mV and the associated temperature sensor has the sensitivity of 2.3 mV/°C with linearity up to 95%. They are independent of the variation of supply voltage.

Inspec keywords: integrated circuit layout; CMOS integrated circuits; temperature sensors; thermal stability

Other keywords: supply voltage variation; CMOS process; temperature 20 C to 120 C; PTAT current; fully digital process; temperature stable output; voltage reference; in situ temperature sensor; circuit fabrication; chip layout; voltage 717 mV

Subjects: General fabrication techniques; Thermal variables measurement; CMOS integrated circuits; Sensing devices and transducers

References

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      • L. Najafizadeh , I.M. Filanovsky . A simple voltage reference using transistor with ZTC point and PTAT current source. Proc. IEEE ISCAS'04 , 23 - 26
    2. 2)
      • Liu, C.P., Huang, H.P.: `A CMOS voltage reference with temperature sensor using self-PTAT current compensation', IEEE International SOC Conference, 25–28 September 2005, Washington, D.C., p. 39–42.
    3. 3)
      • M.C. Weng , J.C. Wu . A temperature sensor in 0.6 µm CMOS technology. Proc. IEEE ASICs , 116 - 119
    4. 4)
      • B.S. Song , P.R. Gray . A precision curvature-compensated CMOS bandgap reference. IEEE J. Solid-State Circuits , 634 - 643
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