Monolithic 1.55 µm GaInNAsSb quantum well passively modelocked lasers
Monolithic 1.55 µm GaInNAsSb quantum well passively modelocked lasers
- Author(s): Y.-C. Xin ; C.-Y. Lin ; Y. Li ; H.P. Bae ; H.B. Yuen ; M.A. Wistey ; J.S. Harris ; S.R. Bank ; L.F. Lester
- DOI: 10.1049/el:20080362
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- Author(s): Y.-C. Xin 1 ; C.-Y. Lin 1 ; Y. Li 1 ; H.P. Bae 2 ; H.B. Yuen 2 ; M.A. Wistey 2 ; J.S. Harris 2 ; S.R. Bank 2 ; L.F. Lester 1
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View affiliations
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Affiliations:
1: Center of High Technology Material, University of New Mexico, Albuquerque, USA
2: Solid State and Photonics Laboratory, Stanford University, Stanford, USA
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Affiliations:
1: Center of High Technology Material, University of New Mexico, Albuquerque, USA
- Source:
Volume 44, Issue 9,
24 April 2008,
p.
581 – 582
DOI: 10.1049/el:20080362 , Print ISSN 0013-5194, Online ISSN 1350-911X
The first monolithic GaInNAsSb quantum well 1.55 µm passively modelocked lasers grown on a GaAs substrate are reported. A repetition rate of up to 13.2 GHz and an optical pulse width as small as 26 ps have been realised.
Inspec keywords: nitrogen compounds; gallium arsenide; quantum well lasers; laser mode locking; indium compounds; gallium compounds; III-V semiconductors
Other keywords:
Subjects: Semiconductor lasers; Laser beam modulation, pulsing and switching; mode locking and tuning; Lasing action in semiconductors; Design of specific laser systems; Laser beam modulation, pulsing and switching; mode locking and tuning
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