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A resistive switching memory device was fabricated using poly(o-anthranilic acid) (PARA) film. The device has a metal/PARA/metal sandwich-like structure. When the device is biased with voltage beyond a critical value, it suddenly switches from a high resistive state to a low resistive state, with a difference in injection current of more than three orders of magnitude. By controlling the injection current level, it was possible to achieve non-volatile memory behaviour. The devices possess a prolonged retention time of 3×103 s after switching. The conduction mechanism in the off-state implies that the resistive switching of the device can be explained in terms of filament theory.
Inspec keywords: random-access storage; electric current control; polymer films; semiconductor storage; MIM structures; semiconductor thin films
Other keywords:
Subjects: Memory circuits; Metal-insulator-metal and metal-semiconductor-metal structures; Current control; Semiconductor storage