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A resistive switching memory device was fabricated using poly(o-anthranilic acid) (PARA) film. The device has a metal/PARA/metal sandwich-like structure. When the device is biased with voltage beyond a critical value, it suddenly switches from a high resistive state to a low resistive state, with a difference in injection current of more than three orders of magnitude. By controlling the injection current level, it was possible to achieve non-volatile memory behaviour. The devices possess a prolonged retention time of 3×103 s after switching. The conduction mechanism in the off-state implies that the resistive switching of the device can be explained in terms of filament theory.
References
-
-
1)
-
S.S. Baek ,
D.J. Lee ,
J.Y. Kim ,
S.H. Hong ,
O.H. Kim ,
M.H. Ree
.
Novel digital nonvolatile memory devices based on semiconducting polymer thin films.
Adv. Funct. Mater.
,
2637 -
2644
-
2)
-
G. Dearnaley ,
A.M. Stoneham ,
D.V. Morgan
.
Electrical phenomena in amorphous oxide films.
Rep. Prog. Phys.
,
1129 -
1191
-
3)
-
Baek, I.G., Kim, D.C., Lee, M.J., Kim, H.-J., Yim, E.K., Lee, M.S., Lee, J.E., Ahn, S.E., Seo, S., Lee, J.H., Park, J.C., Cha, Y.K., Park, S.O., Kim, H.S., Yoo, I.K., Chung, U., Moon, J.T., Ryu, B.I.: `Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application', Int. Electron Devices Meet., 2005, Washington, DC, USA, p. 750.
-
4)
-
L. Ma ,
S. Pyo ,
J. Ouyang ,
Q. Xu ,
Y. Yang.
.
Nonvolatile electrical bistability of organic/metal-nanocluster/organic system.
Appl. Phys. Lett.
,
1419 -
1421
-
5)
-
A. Bandyopadhyay ,
A.J. Pal
.
Key to design functional organic molecules for binary operation with large conductance switching.
Chem. Phys. Lett.
,
86 -
90
-
6)
-
B.J. Choi ,
D.S. Jeong ,
S.K. Kim ,
C. Rohde ,
S. Choi ,
J.H. Oh ,
H.J. Kim ,
C.S. Hwang ,
K. Szot ,
R. Waser ,
B. Reichenberg ,
S. Tiedke
.
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition.
J. Appl. Phys
-
7)
-
C.H. Tu ,
Y.S. Lai ,
D.L. Kwongi
.
Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films.
IEEE Electron Device Lett.
,
354 -
356
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