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Unipolar resistive switching characteristic of semiconducting poly(o-anthranilic acid) film

Unipolar resistive switching characteristic of semiconducting poly(o-anthranilic acid) film

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  • Author(s): D. Lee 1 ; S. Baek 2 ; M. Ree 2 ; O. Kim 1
    • View affiliations
    • Affiliations: 1: Department of Electronic and Electrical Engineering and BK21 Program, Pohang University of Science and Technology, Pohang, Republic of Korea
      2: Department of Chemistry, National Research Lab for Polymer Synthesis and Physics, Center for Integrated Molecular Systems, Polymer Research Institute, and BK School of Molecular Science, Pohang University of Science and Technology, Pohang, Republic of Korea
  • Source: Volume 44, Issue 9, 24 April 2008, p. 596 – 598
    DOI:  10.1049/el:20080326 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Engineering and Technology
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A resistive switching memory device was fabricated using poly(o-anthranilic acid) (PARA) film. The device has a metal/PARA/metal sandwich-like structure. When the device is biased with voltage beyond a critical value, it suddenly switches from a high resistive state to a low resistive state, with a difference in injection current of more than three orders of magnitude. By controlling the injection current level, it was possible to achieve non-volatile memory behaviour. The devices possess a prolonged retention time of 3×103 s after switching. The conduction mechanism in the off-state implies that the resistive switching of the device can be explained in terms of filament theory.

Inspec keywords: random-access storage; electric current control; polymer films; semiconductor storage; MIM structures; semiconductor thin films

Other keywords: resistive switching memory device fabrication; prolonged retention time; unipolar resistive switching characteristics; semiconducting poly(o-anthranilic acid) film; filament theory; injection current level control; nonvolatile memory behaviour; conduction mechanism

Subjects: Memory circuits; Metal-insulator-metal and metal-semiconductor-metal structures; Current control; Semiconductor storage

References

    1. 1)
      • S.S. Baek , D.J. Lee , J.Y. Kim , S.H. Hong , O.H. Kim , M.H. Ree . Novel digital nonvolatile memory devices based on semiconducting polymer thin films. Adv. Funct. Mater. , 2637 - 2644
    2. 2)
    3. 3)
      • Baek, I.G., Kim, D.C., Lee, M.J., Kim, H.-J., Yim, E.K., Lee, M.S., Lee, J.E., Ahn, S.E., Seo, S., Lee, J.H., Park, J.C., Cha, Y.K., Park, S.O., Kim, H.S., Yoo, I.K., Chung, U., Moon, J.T., Ryu, B.I.: `Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application', Int. Electron Devices Meet., 2005, Washington, DC, USA, p. 750.
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