Unipolar resistive switching characteristic of semiconducting poly(o-anthranilic acid) film

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Unipolar resistive switching characteristic of semiconducting poly(o-anthranilic acid) film

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A resistive switching memory device was fabricated using poly(o-anthranilic acid) (PARA) film. The device has a metal/PARA/metal sandwich-like structure. When the device is biased with voltage beyond a critical value, it suddenly switches from a high resistive state to a low resistive state, with a difference in injection current of more than three orders of magnitude. By controlling the injection current level, it was possible to achieve non-volatile memory behaviour. The devices possess a prolonged retention time of 3×103 s after switching. The conduction mechanism in the off-state implies that the resistive switching of the device can be explained in terms of filament theory.

Inspec keywords: random-access storage; electric current control; polymer films; semiconductor storage; MIM structures; semiconductor thin films

Other keywords: resistive switching memory device fabrication; prolonged retention time; unipolar resistive switching characteristics; semiconducting poly(o-anthranilic acid) film; filament theory; injection current level control; nonvolatile memory behaviour; conduction mechanism

Subjects: Memory circuits; Metal-insulator-metal and metal-semiconductor-metal structures; Current control; Semiconductor storage

References

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      • S.S. Baek , D.J. Lee , J.Y. Kim , S.H. Hong , O.H. Kim , M.H. Ree . Novel digital nonvolatile memory devices based on semiconducting polymer thin films. Adv. Funct. Mater. , 2637 - 2644
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      • Baek, I.G., Kim, D.C., Lee, M.J., Kim, H.-J., Yim, E.K., Lee, M.S., Lee, J.E., Ahn, S.E., Seo, S., Lee, J.H., Park, J.C., Cha, Y.K., Park, S.O., Kim, H.S., Yoo, I.K., Chung, U., Moon, J.T., Ryu, B.I.: `Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application', Int. Electron Devices Meet., 2005, Washington, DC, USA, p. 750.
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