Very-low-threshold current density 1.29 µm GaInNAs triple quantum well lasers grown by molecular beam epitaxy

H. Zhao; G. Adolfsson; S.M. Wang; M. Sadeghi; A. Larsson

Very-low-threshold current density 1.29 µm GaInNAs triple quantum well lasers grown by molecular beam epitaxy

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Very-low-threshold current density 1.29 µm GaInNAs triple quantum well lasers grown by molecular beam epitaxy

Author(s): H. Zhao ; G. Adolfsson ; S.M. Wang ; M. Sadeghi ; A. Larsson
DOI: 10.1049/el:20080199

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Author(s): H. Zhao ¹ ; G. Adolfsson ¹ ; S.M. Wang ¹ ; M. Sadeghi ² ; A. Larsson ¹
- Affiliations: 1: Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden
  2: Nanofabrication Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden
Source: Volume 44, Issue 7, 27 March 2008, p. 475 – 477
DOI: 10.1049/el:20080199 , Print ISSN 0013-5194, Online ISSN 1350-911X

Published

Very-low-threshold Ga_0.62In_0.38N_0.007As_0.993/GaN_0.011As_0.989/GaAs triple quantum well (QW) lasers emitting at 1.29 µm are demonstrated. The laser structure was grown by molecular beam epitaxy after extensive optimisations of growth and in situ annealing conditions. As-cleaved broad-area lasers with a cavity length of 1 mm under pulsed operation showed a record low-threshold current density of 400 A/cm² (∼130 A/cm²/QW), a high differential efficiency of 0.32 W/A/facet and a characteristic temperature of 94 K in the temperature range 10 to 110°C.

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Very-low-threshold current density 1.29 µm GaInNAs triple quantum well lasers grown by molecular beam epitaxy

Very-low-threshold current density 1.29 µm GaInNAs triple quantum well lasers grown by molecular beam epitaxy

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