Reduction of leakage current of 4H-SiC pin diodes after UV light exposure

Author(s): M. Wolborski ; M. Bakowski ; A. Schöner
DOI: 10.1049/el:20073494

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Author(s): M. Wolborski ¹ ; M. Bakowski ² ; A. Schöner ²
- Affiliations: 1: Department of Microelectronics and Applied Physics, Royal Institute of Technology, Kista, Sweden
  2: Department of Microelectronics and Applied Physics, Acreo AB, Kista, Sweden
Source: Volume 43, Issue 2, 18 January 2007, p. 129 – 130
DOI: 10.1049/el:20073494 , Print ISSN 0013-5194, Online ISSN 1350-911X

A substantial reduction of the leakage current in 4H-SiC pin diodes is observed after <10 eV UV irradiation in air. The high energy UV is believed to remove carbon clusters from the SiC surface. Comparison of leakage current in 4H-SiC pin diodes after different surface treatments, including reactive ion etching, exposure to two different sources of UV light and different forms of chemical cleaning, is presented. Exposure to 4.9 eV UV light in nitrogen atmosphere enhances the leakage by one order of magnitude.

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Reduction of leakage current of 4H-SiC pin diodes after UV light exposure

Reduction of leakage current of 4H-SiC pin diodes after UV light exposure

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