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Microwave frequency beating between monolithically integrated quantum-dot ring lasers

Microwave frequency beating between monolithically integrated quantum-dot ring lasers

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The fabrication of quantum-dot-based optoelectronic integrated circuits incorporating twin ring diode lasers, waveguides, directional couplers, a Y-junction mixer, and photodetectors, is reported. Microwave frequency beating between longitudinal modes from individual ring diode lasers as well as beat notes between integrated twin ring diode lasers are demonstrated.

Inspec keywords: photodetectors; integrated optoelectronics; III-V semiconductors; gallium arsenide; masers; indium compounds; ring lasers; quantum dot lasers

Other keywords: microwave frequency beating; InAs-InGaAs-GaAs; quantum-dot-based optoelectronic integrated circuits; ring diode lasers; Y-junction mixer; directional couplers; waveguides; photodetectors; monolithically integrated quantum-dot ring lasers

Subjects: Lasing action in semiconductors; Laser resonators and cavities; Integrated optoelectronics; Masers; Masers; Semiconductor lasers; Laser resonators and cavities

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      • H.-J. Cao , H. Deng , H. Ling , C.-Y. Liu , V.A. Smagley , R.B. Caldwell , G.A. Smolyakov , A.L. Gray , L.F. Lester , P.G. Eliseev , M. Osiński . Highly unidirectional InAs/InGaAs/GaAs quantum-dot ring lasers. Appl. Phys. Lett.
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