© The Institution of Engineering and Technology
Silicon ions were implanted to source-drain regions to achieve a non-alloyed ohmic contact resistance as low as 0.2 Ω · mm. Based on this technology, T-shaped deep submicron HEMTs were fabricated. An extrinsic fT of 92 GHz and an extrinsic fmax of 148 GHz have been measured in a passivated 0.15×150 µm device. Power measurements at 10 GHZ showed 70.7% power-added-efficiency and 4.1 W/mm power density at 20 V drain bias.
References
-
-
1)
-
H. Yu ,
L. McCarthy ,
S. Rajan ,
S. Keller ,
S.P. DenBaars ,
J.S. Speck ,
U.K. Mishra
.
Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts.
IEEE Electron Device Lett.
,
283 -
285
-
2)
-
T. Palacios ,
A. Chakraborty ,
S. Rajan ,
C. Poblenz ,
S. Keller ,
S.P. DenBaars ,
J.S. Speck ,
U.K. Mishra
.
High-power AlGaN/GaN HEMTs for Ka-band applications.
IEEE Electron Device Lett.
,
781 -
783
-
3)
-
M. Higashiwaki ,
T. Matsui ,
T. Mimura
.
AlGaN/GaN MIS-HFETs with fT of 163 GHz using cat-CVD SiN gate-insulating and passivation layers.
IEEE Electron Device Lett.
,
1 ,
16 -
18
-
4)
-
Moon, J.S., Hashimoto, P., Wong, D., Hu, M., Antcliffe, M., McGuire, C., Micovic, M., Willadsen, P., Chow, D.: `10W/mm and high PAE field-plated AlGaN/GaN HEMTs at Ka band with n', 65thDRC Dig., June 2007, p. 33–34.
-
5)
-
Y. Pei ,
L. Shen ,
T. Palacios ,
N.A. Fichtenbaum ,
S. Keller ,
S.P. Denbaars ,
U.K. Mishra
.
Study of the n+ GaN cap in AlGaN/GaN high electron mobility transistors with reduced source-drain resistance.
Jpn. J. Appl. Phys.
,
L842 -
844
-
6)
-
M. Micovic ,
A. Kurdoghlian ,
P. Hashimoto ,
M. Hu ,
M. Antcliffe ,
P.J. Willadsen ,
W.S. Wong ,
R. Bowen ,
I. Milosavljevic ,
A. Schmitz ,
M. Wetzel ,
D.H. Chow
.
GaN HFET for W-band power applications.
IEDM Tech. Dig.
,
425 -
427
-
7)
-
Y.-F. Wu ,
A. Saxler ,
M. Moore
.
30-W/mm GaN HEMTs by field plate optimization.
IEEE Electron Device Lett.
,
3 ,
117 -
119
-
8)
-
Recht, F., McCarthy, L., Shen, L., Poblenz, C., Corrion, A., Speck, J.S., Mishra, U.K.: `AlGaN/GaN HEMTs with large angle implanted non-alloyed ohmic contacts', 65thDRC Dig., 2007, p. 37–38.
-
9)
-
Palmour, J.W., Milligan, J.W., Henning, J., Allen, S.T., Ward, A., Parikh, P., Smith, R.P., Saxler, A., Moore, M., Wu, Y.: `SiC and GaN based transistor and circuit advances', 12thGAAS Symp. Dig., 2004, Amsterdam, The Netherlands, p. 555–558.
-
10)
-
Kao, M., Lee, C., Hajji, R., Saunier, P., Tsemg, H.: `AlGaN/GaN HEMTs with PAE of 53% and at 35 GHz for HPA and multifunction MMIC applications', MTT Dig., 2007, p. 2003.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20072969
Related content
content/journals/10.1049/el_20072969
pub_keyword,iet_inspecKeyword,pub_concept
6
6