Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts
Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts
- Author(s): Y. Pei ; F. Recht ; N. Fichtenbaum ; S. Keller ; S.P. DenBaars ; U.K. Mishra
- DOI: 10.1049/el:20072969
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- Author(s): Y. Pei 1 ; F. Recht 1 ; N. Fichtenbaum 1 ; S. Keller 1 ; S.P. DenBaars 1 ; U.K. Mishra 1
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Affiliations:
1: Department of Electrical and Computer Engineering, University of California, Santa Barbara, USA
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Affiliations:
1: Department of Electrical and Computer Engineering, University of California, Santa Barbara, USA
- Source:
Volume 43, Issue 25,
6 December 2007,
p.
1466 – 1467
DOI: 10.1049/el:20072969 , Print ISSN 0013-5194, Online ISSN 1350-911X
Silicon ions were implanted to source-drain regions to achieve a non-alloyed ohmic contact resistance as low as 0.2 Ω · mm. Based on this technology, T-shaped deep submicron HEMTs were fabricated. An extrinsic fT of 92 GHz and an extrinsic fmax of 148 GHz have been measured in a passivated 0.15×150 µm device. Power measurements at 10 GHZ showed 70.7% power-added-efficiency and 4.1 W/mm power density at 20 V drain bias.
Inspec keywords: wide band gap semiconductors; high electron mobility transistors; aluminium compounds; millimetre wave field effect transistors; ohmic contacts; gallium compounds; III-V semiconductors; contact resistance; ion implantation
Other keywords:
Subjects: Other field effect devices; Solid-state microwave circuits and devices; Semiconductor doping
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