A report is presented on the observation of hole excitations in unintentionally p-doped self-assembled InAs/GaAs quantum dots by resonant Raman spectroscopy. The small difference in the valence intraband energy values obtained by Raman and PL spectra is explained by the Coulomb interaction between electrons and holes. However, the reason why the maximum resonance occurs at a slightly higher energy than that of the hole excitation seen in Raman spectra is unknown.
Inspec keywords: semiconductor quantum dots; gallium arsenide; indium compounds; photoluminescence; Raman spectra; valence bands; self-assembly; III-V semiconductors
Other keywords:
Subjects: Low-dimensional structures: growth, structure and nonelectronic properties; Photoluminescence in II-VI and III-V semiconductors; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); Optical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Semiconductor superlattices, quantum wells and related structures; II-VI and III-V semiconductors; Electron states in low-dimensional structures; Infrared and Raman spectra in inorganic crystals; Electrical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures)
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