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Detection of terahertz radiation with diode lasers

Detection of terahertz radiation with diode lasers

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A standard commercial semiconductor is shown to be able to detect terahertz (THz) radiation at room temperature. A voltage variation across the active region of the device upon incident THz radiation is measured. The detected voltage signal scales linearly with the THz intensity measured with a Golay cell. A detailed analysis shows that thermal effects following the THz absorption by the carrier plasma play an important role in this detection process.

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      • E. Bründermann . (2004) Wideley tunable far infrared hot hole semiconductor lasers, Long-wavelength infrared semiconductor lasers.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20071401
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