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Heteroepitaxy of polycrystalline 3C-SiC film on Si substrate using AlN buffer layer

Heteroepitaxy of polycrystalline 3C-SiC film on Si substrate using AlN buffer layer

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The characteristics of poly (polycrystalline) 3C-SiC grown on SiO2 and AlN buffer layers by CVD are described. XRD and FT-IR were used to obtain the crystallinity and Si-C bonding structure of the poly 3C-SiC according to various growth temperatures and buffer layers. The surface chemical composition and the electron mobility of the poly 3C-SiC grown on each buffer layer were investigated by XPS and the Hall effect.

Inspec keywords: silicon compounds; Fourier transform spectra; X-ray diffraction; X-ray photoelectron spectra; semiconductor growth; wide band gap semiconductors; Hall effect; infrared spectra; electron mobility; surface composition; chemical vapour deposition; aluminium compounds; semiconductor epitaxial layers

Other keywords: surface chemical composition; XRD; CVD; Hall effect; electron mobility; heteroepitaxy; bonding structure; XPS; buffer layer; SiC-AlN-SiO2; FTIR spectra; polycrystalline film

Subjects: Photoelectron spectra of semiconductors and insulators; Galvanomagnetic and other magnetotransport effects (semiconductors/insulators); Photoelectron spectra of composite surfaces; Other semiconductor materials; Chemical vapour deposition; Electrical properties of other inorganic semiconductors (thin films, low-dimensional and nanoscale structures); Optical properties of other inorganic semiconductors and insulators (thin films, low-dimensional and nanoscale structures); Infrared and Raman spectra in inorganic crystals; Chemical vapour deposition; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Solid surface structure; Thin film growth, structure, and epitaxy

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