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Free engineering of buried oxide patterns in GaAs/AlAs epitaxial structures

Free engineering of buried oxide patterns in GaAs/AlAs epitaxial structures

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© The Institution of Engineering and Technology
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The formation of a buried aluminium oxide from the surface of a GaAs/AlAs epitaxial structure is presented and validated through the localised electroluminescence in a light emitting diode device. This oxidation method relies on photolithography, plasma treatment and wet thermal oxidation. This enables localised buried oxide areas to be formed by a vertical oxidation process applied from the surface. Because of this new technology, the shape of the oxidised areas can be freely designed, unlike when using the standard lateral oxidation technology.

Inspec keywords: epitaxial layers; light emitting diodes; oxidation; gallium arsenide; photolithography; aluminium compounds

Other keywords: localised buried oxide; lateral oxidation; buried aluminium oxide; photolithography; plasma treatment; localised electroluminescence; light emitting diode device; GaAs/AlAs epitaxial structures; buried oxide patterns; vertical oxidation; free engineering; wet thermal oxidation

Subjects: Surface treatment (semiconductor technology); Lithography (semiconductor technology); Light emitting diodes; Thin film growth and epitaxy

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