9.5 GHz GaInP/GaAs HBT divide-by-two frequency divider using super-dynamic D-type flip–flop technique

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9.5 GHz GaInP/GaAs HBT divide-by-two frequency divider using super-dynamic D-type flip–flop technique

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A frequency divider with super-dynamic D-type flip–flop is demonstrated in 2 µm GaInP/GaAs HBT (  fT = 40 GHz) technology. By biasing the HBT devices around the peak transit-time frequency (  fT), the operating frequency of a D-FF with ECNFP (emitter-coupled negative feedback pairs) can be improved. At a supply voltage of 5 V, a divide-by-two function of 9.5 GHz is achieved.

Inspec keywords: frequency dividers; indium compounds; flip-flops; heterojunction bipolar transistors; gallium arsenide; III-V semiconductors; microwave bipolar transistors

Other keywords: HBT; tire peak transit-time frequency; ECNFP; GaInP-GaAs; frequency 9.5 GHz; divide-by-two frequency divider; emitter-coupled negative feedback pairs; super-dynamic D-type flip flop technique

Subjects: Convertors; Logic circuits; Solid-state microwave circuits and devices; Bipolar transistors

References

    1. 1)
      • K. Murata , T. Otsuji , M. Yoneyama , M. Tokumitsu . A 40-Gbit/s superdynamic decision IC fabricated with 0.12-µm GaAs MEDFET's. IEEE J. Solid-State Circuits , 10 , 1527 - 1535
    2. 2)
      • K. Murata , T. Otsuji , E. Sano , M. Ohhata , M. Togashi , M. Suzuki . A novel high-speed latching operation flip–flop (HLO-FF) circuit and its application to a 19-Gb/s decision circuit using a 0.2-µm GaAs MEDFET. IEEE J. Solid-State Circuits , 10 , 1101 - 1108
    3. 3)
      • Y. Kuriyama , T. Sugiyama , S. Hongo , K. Akagi , K. Tsuda , N. Iizuka , M. Obara . A 40-GHz D-type flip–flop using AlGaAs/GaAs HBT's. IEEE J. Solid-State Circuits , 10 , 1128 - 1130
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