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Measured negative differential resistivity for GaN Gunn diodes on GaN substrate

Measured negative differential resistivity for GaN Gunn diodes on GaN substrate

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Current-voltage characteristics obtained by pulse-biasing GaN Gunn diodes on GaN substrate showed a wide negative differential resistance (NDR) region. Electrical fields of up to twice the threshold value did not lead to any electromigration effects from the contacts. The electron drift-velocity (vD) was estimated to be 1.9×107 cm/s. This represents the first demonstration of a stable NDR with a vertical GaN-based Gunn device.

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      • http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaN/highfield.html.
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