© The Institution of Engineering and Technology
n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs on the identical chip by selectively etching process are first demonstrated. Particularly, the saturation voltage of the n-channel device is relatively small because 2DEG is formed and modulated in the InGaAs strain channel. Experimentally, an extrinsic transconductance of 292 (72) mS/mm and a saturation current density of 335 (−270) mA/mm are obtained for the n-channel (p-channel) device. Furthermore, the integrated devices exhibit broad gate voltage swings for linear and signal amplifier applications.
References
-
-
1)
-
M.K. Tsai ,
S.W. Tan ,
Y.W. Wu ,
W.S. Lour ,
Y.J. Yang
.
Depletion-mode and enhancement-mode InGaP/GaAs δ-HEMTs for low supply-voltage applications.
Semicond. Sci. Technol.
,
156 -
160
-
2)
-
L.W. Laih ,
W.S. Lour ,
J.H. Tsai ,
W.C. Liu ,
C.Z. Wu ,
K.B. Thei ,
R.C. Liu
.
Characteristics of metal-insulated-semiconductor (MIS) like In0.2Ga0.8As/GaAs doped-channel structure.
Solid-State Electron
,
15 -
20
-
3)
-
ATLAS 2000 2-D semiconductor device simulator, version 5.2.0.R. SILVACO Int. Santa Clara. CA, USA.
-
4)
-
M. Passlack ,
J.K. Abrokwah ,
R. Lucero
.
Experimental observation of velocity overshoot in n-channel AlGaAs/InGaAs/GaAs enhancement mode MODFETs.
IEEE Electron Device Lett.
,
518 -
520
-
5)
-
R. Kanan ,
B. Hochet ,
M. Declercq
.
Pseudo-complementary FET logic (PCFL): a low-power logic family in GaAs.
IEEE J. Solid-State Circuits
,
992 -
1000
-
6)
-
K.H. Yu ,
H.M. Chuang ,
K.W. Lin ,
C.C. Cheng ,
J.Y. Chen ,
W.C. Liu
.
Improved temperature-dependent performances of a novel InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT).
IEEE Trans. Electron Devices
,
1687 -
1693
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20070621
Related content
content/journals/10.1049/el_20070621
pub_keyword,iet_inspecKeyword,pub_concept
6
6