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Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs

Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs

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n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs on the identical chip by selectively etching process are first demonstrated. Particularly, the saturation voltage of the n-channel device is relatively small because 2DEG is formed and modulated in the InGaAs strain channel. Experimentally, an extrinsic transconductance of 292 (72) mS/mm and a saturation current density of 335 (−270) mA/mm are obtained for the n-channel (p-channel) device. Furthermore, the integrated devices exhibit broad gate voltage swings for linear and signal amplifier applications.

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      • ATLAS 2000 2-D semiconductor device simulator, version 5.2.0.R. SILVACO Int. Santa Clara. CA, USA.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20070621
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