Hybrid nanocrystal FinFET with large P/E window for MLC NAND Flash memory application

Hybrid nanocrystal FinFET with large P/E window for MLC NAND Flash memory application

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The engineered trap layer with nanocrystal and high-k blocking oxide are applied to the FinFET structure. The increased trap density of the hybrid nanocrystal trap layer and the enhanced leakage reduction of AlxOy are proposed as a dominant role of the larger program and erase window of 8.3 V which is applicable to the MLC Flash memory device.


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