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1V NOR Flash memory employing inductor merged within package

1V NOR Flash memory employing inductor merged within package

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A NOR Flash memory fully functional at 1 V is demonstrated, based on an inductor built directly into the package. A ferromagnetic nucleus is wound by means of the bonding wires and the first package substrate metal layer. The magnetic field does not affect the system since it is strictly confined into the toroidal nucleus. The whole system is enclosed into a standard BGA package 8×14×1.4 mm with 88 balls.

References

    1. 1)
      • Ripamonti, G., Bertolaccini, M., Peritore, R., Schippers, S.: `Low power-low voltage band gap references for flash-EEPROM integrated circuits: design alternatives and experiments', Proc. of Electronics, Circuits and Systems, (ICESC '99), September 1999, 2, p. 635–638.
    2. 2)
      • W.D. Brown . (1999) Advanced electronic packaging.
    3. 3)
      • P. Pulici . 1.2V NOR Flash memory in a System-in-Package. Electron. Lett. , 23 , 1333 - 1334
    4. 4)
      • G. Ripamonti . Inductive structure.
    5. 5)
      • Maxwell 3D of Ansoft inc.: www.ansoft.com.
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