Small-dimension power-efficient high-speed vertical-cavity surface-emitting lasers

Access Full Text

Small-dimension power-efficient high-speed vertical-cavity surface-emitting lasers

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Engineering and Technology
Published

Small-dimension power-efficient high-speed oxide-confined 980 nm vertical-cavity surface-emitting lasers (VCSELs) with record-high bandwidth/power-dissipation ratio of 12.5 GHz/mW have been demonstrated. The devices show a modulation bandwidth of 15 GHz at a bias current 0.9 mA, corresponding to only 1.2 mW power dissipation.

Inspec keywords: optical modulation; surface emitting lasers

Other keywords: 1.2 mW; 0.9 mA; high-speed oxide-confined VCSEL; 980 nm; vertical-cavity surface-emitting lasers; 15 GHz

Subjects: Laser beam modulation, pulsing and switching; mode locking and tuning; Semiconductor lasers; Laser beam modulation, pulsing and switching; mode locking and tuning; Laser resonators and cavities; Laser resonators and cavities; Lasing action in semiconductors

References

    1. 1)
      • Kuchta, D.M., Pepeljugoski, P., Kwark, Y.: `VCSEL modulation at 20 Gbit/s over 200 m of multimode fiber using a 3.3 v SiGe laser driver IC', Tech. Dig. LEOS Summer Topical Meeting, 2001, p. 49–50.
    2. 2)
      • AL-Omari, A.N., Carey, G.P., Hallstein, S., Watson, J.P., Dang, G., Lear, K.L.: `Low thermal resistance, low current density, high-speed 980 and 850 nm VCSELs', Int. Semiconductor Laser Conf., 2006, p. 127–128.
    3. 3)
    4. 4)
    5. 5)
      • Suzuki, N., Hatakeyama, H., Fukatsu, K., Anan, T., Yashiki, K., Tsuji, M.: `25-Gbps operation of 1.1-µm-range InGaAs VCSELs for high-speed optical interconnections', Optical Fiber Communications Conf., Tech. Dig, 2006, paper no. OFA4.
    6. 6)
    7. 7)
    8. 8)
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20070195
Loading

Related content

content/journals/10.1049/el_20070195
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading