Low on-resistance GaN pin rectifiers grown on 6H-SiC substrates

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Low on-resistance GaN pin rectifiers grown on 6H-SiC substrates

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Low on-resistance gallium nitride pin rectifiers grown by metal organic chemical vapour deposition on n-type 6H-SiC substrates are reported. The diode structures consist of an n+-GaN layer grown on the substrate, followed by a 2.5 µm unintentionally doped i-GaN layer, and a p-type GaN layer capped with a p++-GaN contact layer. The mesa-structure pin diodes exhibited a blocking voltage as large as Vr ∼−500 V, at a reverse current density of Ir ∼1 A/cm2. The on-resistance is 2.3 mΩ · cm2 for an 80 µm mesa diameter circular device. This yields a power figure of merit value of 108.69 MW/cm2. The on-resistance and the figure of merit values are believed to be the best reported for vertical mesa-geometry GaN pin rectifiers grown on 6H-SiC substrates with comparable i-layer thickness.

Inspec keywords: MOCVD; III-V semiconductors; gallium compounds; solid-state rectifiers; p-i-n diodes; semiconductor growth; silicon compounds; wide band gap semiconductors

Other keywords: mesa-structure pin diodes; 80 micron; 2.5 micron; 6H-SiC substrates; n+-GaN layer; p++-GaN contact layer; GaN pin rectifiers; metal organic chemical vapour deposition; reverse current density; diode structures; p-type GaN layer; gallium nitride pin rectifiers; GaN

Subjects: Junction and barrier diodes

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