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Low on-resistance gallium nitride pin rectifiers grown by metal organic chemical vapour deposition on n-type 6H-SiC substrates are reported. The diode structures consist of an n+-GaN layer grown on the substrate, followed by a 2.5 µm unintentionally doped i-GaN layer, and a p-type GaN layer capped with a p++-GaN contact layer. The mesa-structure pin diodes exhibited a blocking voltage as large as Vr ∼−500 V, at a reverse current density of Ir ∼1 A/cm2. The on-resistance is 2.3 mΩ · cm2 for an 80 µm mesa diameter circular device. This yields a power figure of merit value of 108.69 MW/cm2. The on-resistance and the figure of merit values are believed to be the best reported for vertical mesa-geometry GaN pin rectifiers grown on 6H-SiC substrates with comparable i-layer thickness.
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